Datasheet

2003 Dec 22 9
NXP Semiconductors Product data sheet
100 V, 1 A
NPN low V
CEsat
(BISS) transistor
PBSS8110T
05
2
0
0.4
0.8
1.2
1.6
1234
V
CE
(V)
I
C
(A)
mle358
(1)
(2)
(3)
(4)
(9)
(5)
(10)
(7)
(8)
(6)
Fig.13 Collector current as a function of
collector-emitter voltage; typical values.
(1) I
B
= 3500 μA.
(2) I
B
= 3150 μA.
(3) I
B
= 2800 μA.
(4) I
B
= 2450 μA.
(5) I
B
= 2100 μA.
(6) I
B
= 1750 μA.
(7) I
B
= 1400 μA.
(8) I
B
= 1050 μA.
(9) I
B
= 700 μA.
(10) I
B
= 350 μA.
T
amb
= 25 °C.
handbook, halfpage
MLE359
10
3
10
2
1
10
−1
10
10
−1
1
R
CEsat
(Ω)
I
C
(mA)
10 10
2
10
3
10
4
(3)
(1)
(2)
Fig.14 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
I
C
/I
B
= 10.
(1) T
amb
= 100 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
handbook, halfpage
MLE360
10
3
10
2
1
10
−1
10
10
−1
1
R
CEsat
(Ω)
I
C
(mA)
10 10
2
10
3
10
4
Fig.15 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
I
C
/I
B
= 20.
T
amb
= 25 °C.
handbook, halfpage
MLE361
10
3
10
2
1
10
−1
10
10
−1
1
R
CEsat
(Ω)
I
C
(mA)
10 10
2
10
3
10
4
Fig.16 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
I
C
/I
B
= 50.
T
amb
= 25 °C.