Datasheet

2003 Dec 22 8
NXP Semiconductors Product data sheet
100 V, 1 A
NPN low V
CEsat
(BISS) transistor
PBSS8110T
mle357
1
10
−1
10
10
−1
110
I
C
(mA)
V
CEsat
(V)
10
−2
10
−3
10
−4
10
−2
Fig.9 Collector-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 50.
T
amb
= 25 °C.
handbook, halfpage
10
10
−1
11010
2
10
3
10
4
10
−1
1
MLE363
I
C
(mA)
V
BEsat
(V)
(1)
(2)
(3)
Fig.10 Base-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 10.
(1) T
amb
= −55 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= 100 °C.
handbook, halfpage
10
10
−1
11010
2
10
3
10
4
10
−1
1
MLE364
I
C
(mA)
V
BEsat
(V)
Fig.11 Base-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 20.
T
amb
= 25 °C.
handbook, halfpage
10
−1
MLE365
1
10
−1
10
4
10
3
10
2
10 10
I
C
(mA)
V
BEsat
(V)
Fig.12 Base-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 50.
T
amb
= 25 °C.