Datasheet

2003 Dec 22 4
NXP Semiconductors Product data sheet
100 V, 1 A
NPN low V
CEsat
(BISS) transistor
PBSS8110T
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm
2
.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th( j-a)
thermal resistance from junction to
ambient
in free air; note 1 417 K/W
in free air; note 2 260 K/W
mle356
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
10
2
10
10
3
Z
th
(K/W)
1
t
p
t
p
T
P
t
T
δ =
(1)
(7)
(8)
(9)
(10)
(2)
(3)
(4)
(5)
(6)
Fig.3 Transient thermal impedance as a function of pulse time for standard PCB footprint.
(1) δ = 1.0.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.03.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.0.