Datasheet

2003 Dec 22 2
NXP Semiconductors Product data sheet
100 V, 1 A
NPN low V
CEsat
(BISS) transistor
PBSS8110T
FEATURES
• SOT23 package
• Low collector-emitter saturation voltage V
CEsat
• High collector current capability: I
C
and I
CM
• Higher efficiency leading to less heat generation
• Reduced printed-circuit board requirements.
APPLICATIONS
• Major application segments
– Automotive 42 V power
– Telecom infrastructure
– Industrial
• Power management
– DC/DC converters
– Supply line switching
– Battery charger
– LCD backlighting.
• Peripheral drivers
– Driver in low supply voltage applications (e.g. lamps
and LEDs).
– Inductive load driver (e.g. relays,
buzzers
and motors).
DESCRIPTION
NPN low V
CEsat
transistor in a SOT23 plastic package.
PNP complement: PBSS9110T.
MARKING
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W : Made in China.
TYPE NUMBER MARKING CODE
(1)
PBSS8110T *U8
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
21
3
MAM255
Top view
2
3
1
Fig.1 Simplified outline (SOT23) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage 100 V
I
C
collector current (DC) 1 A
I
CM
repetitive peak collector
current
3 A
R
CEsat
equivalent on-resistance 200 mΩ
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PBSS8110T − plastic surface mounted package; 3 leads SOT23