Datasheet

2004 May 12 7
NXP Semiconductors Product data sheet
60 V, 1 A
NPN low V
CEsat
(BISS) transistor
PBSS4160T
handbook, halfpage
05
2
0
0.4
0.8
1.2
1.6
1
V
CE
(V)
I
C
(A)
234
MLE131
(1)
(10)
(9)
(7)
(2)(3)
(4)(5)(6)
(8)
Fig.10 Collector current as a function of
collector-emitter voltage; typical values.
(1) I
B
= 60 mA.
(2) I
B
= 54 mA.
(3) I
B
= 48 mA.
(4) I
B
= 42 mA.
(5) I
B
= 36 mA.
(6) I
B
= 30 mA.
(7) I
B
= 24 mA.
(8) I
B
= 18 mA.
(9) I
B
= 12 mA.
(10) I
B
= 6 mA.
T
amb
= 25 °C.
handbook, halfpage
MLE132
10
3
10
2
1
10
−1
10
10
−1
1
R
CEsat
(Ω)
I
C
(mA)
10 10
2
10
3
10
4
(3)
(1)
(2)
Fig.11 Equivalent on-resistance as a function of
collector current; typical values.
I
C
/I
B
= 20.
(1) T
amb
= 100 °C. (2) T
amb
= 25 °C. (3) T
amb
= −55 °C.