Datasheet

2004 May 12 5
NXP Semiconductors Product data sheet
60 V, 1 A
NPN low V
CEsat
(BISS) transistor
PBSS4160T
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= 60 V; I
E
= 0 A − − 100 nA
V
CB
= 60 V; I
E
= 0 A; T
j
= 150 °C − − 50 μA
I
CES
collector-emitter cut-off current V
CE
= 60 V; V
BE
= 0 A − − 100 nA
I
EBO
emitter-base cut-off current V
EB
= 5 V; I
C
= 0 A − − 100 nA
h
FE
DC current gain V
CE
= 5 V; I
C
= 1 mA 250 400 −
V
CE
= 5 V; I
C
= 500 mA; note 1 200 350 −
V
CE
= 5 V; I
C
= 1 A; note 1 100 150 −
V
CEsat
collector-emitter saturation voltage I
C
= 100 mA; I
B
= 1 mA − 90 110 mV
I
C
= 500 mA; I
B
= 50 mA − 110 140 mV
I
C
= 1 A; I
B
= 100 mA; note 1 − 200 250 mV
V
BEsat
base-emitter saturation voltage I
C
= 1 A; I
B
= 50 mA − 0.95 1.1 V
R
CEsat
equivalent on-resistance I
C
= 1 A; I
B
= 100 mA; note 1 − 200 250 mΩ
V
BEon
base-emitter turn-on voltage V
CE
= 5 V; I
C
= 1 A − 0.82 0.9 V
f
T
transition frequency I
C
= 50 mA; V
CE
= 10 V;
f
= 100 MHz
150 220 − MHz
C
c
collector capacitance V
CB
= 10 V; I
E
= I
e
= 0 A; f = 1 MHz − 5.5 10 pF
handbook, halfpage
0
800
200
400
600
MLE130
10
−1
1
I
C
(mA)
h
FE
10 10
2
10
3
10
4
(1)
(2)
(3)
Fig.4 DC current gain as a function of collector
current; typical values.
V
CE
= 5 V.
(1) T
amb
= 100 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
handbook, halfpage
MLE133
0
1.2
0.4
0.8
10
−1
110
I
C
(mA)
V
BE
(V)
10
2
10
3
10
4
(1)
(3)
(2)
Fig.5 Base-emitter voltage as a function of
collector current; typical values.
V
CE
= 5 V.
(1) T
amb
= −55 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= 100 °C.