Datasheet

2004 May 12 4
NXP Semiconductors Product data sheet
60 V, 1 A
NPN low V
CEsat
(BISS) transistor
PBSS4160T
THERMAL CHARACTERISTICS
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and 1 cm
2
collector mounting pad.
3. Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width t
p
≤ 10 ms.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to
ambient
in free air; note 1 465 K/W
in free air; note 2 312 K/W
in free air; notes 1 and 3 100 K/W
handbook, full pagewidth
10
3
10
2
10
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
Z
th
(K/W)
t
p
(s)
10 10
2
10
3
MLE127
δ = 1
0.75
0.33
0.05
0.02
0.01
0
0.5
0.2
0.1
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
Mounted on printed-circuit board; standard footprint.