Datasheet

2004 May 12 3
NXP Semiconductors Product data sheet
60 V, 1 A
NPN low V
CEsat
(BISS) transistor
PBSS4160T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm
2
collector mounting pad.
3. Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width t
p
≤ 10 ms.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 80 V
V
CEO
collector-emitter voltage open base − 60 V
V
EBO
emitter-base voltage open collector − 5 V
I
C
collector current (DC) note 1 − 0.9 A
note 2 − 1 A
I
CM
peak collector current t = 1 ms or limited by T
j(max)
− 2 A
I
B
base current (DC) − 300 mA
I
BM
peak base current t
p
≤ 300 μs; δ ≤ 0.02 − 1 A
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 270 mW
T
amb
≤ 25 °C; note 2 − 400 mW
T
amb
≤ 25 °C; notes 1 and 3 − 1.25 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
handbook, halfpage
0 40 80 160
P
tot
(mW)
(1)
(2)
500
0
400
120
300
200
100
MLE128
T
amb
(°C)
Fig.2 Power derating curves.
(1) Device mounted with 1 cm
2
collector tab.
(2) Device mounted on standard footprint.