Datasheet

2004 May 12 2
NXP Semiconductors Product data sheet
60 V, 1 A
NPN low V
CEsat
(BISS) transistor
PBSS4160T
FEATURES
• Low collector-emitter saturation voltage V
CEsat
• High collector current capability I
C
and I
CM
• High efficiency, reduces heat generation
• Reduces printed-circuit board area required
• Cost effective replacement for medium power transistor
BCP55 and BCX55.
APPLICATIONS
• Major application segments:
– Automotive 42 V power
– Telecom infrastructure
– Industrial.
• Power management:
– DC-to-DC conversion
– Supply line switching.
• Peripheral driver
– Driver in low supply voltage applications (e.g. lamps
and LEDs)
– Inductive load driver (e.g. relays,
buzzers
and motors).
DESCRIPTION
NPN low V
CEsat
transistor in a SOT23 plastic package.
PNP complement: PBSS5160T.
MARKING
Note
1. * = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China.
QUICK REFERENCE DATA
PINNING
TYPE NUMBER MARKING CODE
(1)
PBSS4160T *U5
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage 60 V
I
C
collector current (DC) 1 A
I
CM
peak collector current 2 A
R
CEsat
equivalent on-resistance 250 mΩ
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
21
3
MAM255
Top view
2
3
1
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PBSS4160T − plastic surface mounted package; 3 leads SOT23