DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS4160T 60 V, 1 A NPN low VCEsat (BISS) transistor Product data sheet Supersedes data of 2003 Jun 24 2004 May 12
NXP Semiconductors Product data sheet 60 V, 1 A NPN low VCEsat (BISS) transistor PBSS4160T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat SYMBOL • High collector current capability IC and ICM VCEO collector-emitter voltage 60 V IC collector current (DC) 1 A • Reduces printed-circuit board area required ICM peak collector current 2 A • Cost effective replacement for medium power transistor BCP55 and BCX55.
NXP Semiconductors Product data sheet 60 V, 1 A NPN low VCEsat (BISS) transistor PBSS4160T LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 80 V VCEO collector-emitter voltage open base − 60 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) note 1 − 0.
NXP Semiconductors Product data sheet 60 V, 1 A NPN low VCEsat (BISS) transistor PBSS4160T THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT in free air; note 1 465 K/W in free air; note 2 312 K/W in free air; notes 1 and 3 100 K/W Notes 1. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. 2.
NXP Semiconductors Product data sheet 60 V, 1 A NPN low VCEsat (BISS) transistor PBSS4160T CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER ICBO CONDITIONS collector-base cut-off current MIN. TYP. MAX.
NXP Semiconductors Product data sheet 60 V, 1 A NPN low VCEsat (BISS) transistor PBSS4160T MLE135 1 MLE104 1 handbook, halfpage handbook, halfpage VCEsat (V) VCEsat (V) 10−1 10−1 (2) (1) 10−2 (3) (1) (3) 10−3 10−1 1 10 102 10−2 10−1 103 104 IC (mA) IC/IB = 10. (1) Tamb = 100 °C. (2) Tamb = 25 °C. 1 (3) Tamb = −55 °C. IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.6 Fig.
NXP Semiconductors Product data sheet 60 V, 1 A NPN low VCEsat (BISS) transistor PBSS4160T MLE131 2 (6) handbook, halfpage (5) (4) (3) (2) IC (A) MLE132 103 handbook, halfpage (1) RCEsat (Ω) 1.6 102 (7) (8) 1.2 (9) 10 (10) 0.8 1 0.4 (1) (2) 10−1 10−1 0 0 2 1 3 4 5 VCE (V) 1 10 (3) 102 103 104 IC (mA) Tamb = 25 °C. (1) (2) (3) (4) IB = 60 mA. IB = 54 mA. IB = 48 mA. IB = 42 mA. (5) (6) (7) (8) IB = 36 mA. IB = 30 mA. IB = 24 mA. IB = 18 mA. (9) IB = 12 mA.
NXP Semiconductors Product data sheet 60 V, 1 A NPN low VCEsat (BISS) transistor PBSS4160T PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
NXP Semiconductors Product data sheet 60 V, 1 A NPN low VCEsat (BISS) transistor PBSS4160T DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved.
