Datasheet

LPC15XX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 19 February 2014 69 of 99
NXP Semiconductors
LPC15xx
32-bit ARM Cortex-M3 microcontroller
12. Dynamic characteristics
12.1 Flash/EEPROM memory
[1] Number of program/erase cycles.
[2] Programming times are given for writing 256 bytes to the flash. T
amb
<= +85 C. Flash programming with
IAP calls (see LPC15xx user manual).
12.2 External clock for the oscillator in slave mode
Remark: The input voltage on the XTALIN and XTALOUT pins must be  1.95 V (see
Table 11
). For connecting the oscillator to the XTAL pins, also see Section 14.2.
[1] Parameters are valid over operating temperature range unless otherwise specified.
Table 13. Flash characteristics
T
amb
=  40  C to +105  C. Based on JEDEC NVM qualification. Failure rate < 10 ppm for parts as
specified below.
Symbol Parameter Conditions Min Typ Max Unit
N
endu
endurance
[1]
10000 100000 - cycles
t
ret
retention time powered 10 20 - years
not powered 20 40 - years
t
er
erase time page or multiple
consecutive pages,
sector or multiple
consecutive
sectors
95 100 105 ms
t
prog
programming
time
[2]
0.95 1 1.05 ms
Table 14. EEPROM characteristics
T
amb
=  40  Cto+85  C; V
DD
= 2.7 V to 3.6 V. Based on JEDEC NVM qualification. Failure rate <
10 ppm for parts as specified below.
Symbol Parameter Conditions Min Typ Max Unit
N
endu
endurance 100000 1000000 - cycles
t
ret
retention time powered 100 200 - years
not powered 150 300 - years
t
prog
programming
time
64 bytes - 2.9 - ms
Table 15. Dynamic characteristic: external clock (XTALIN input)
T
amb
=  40  C to +105  C; V
DD
over specified ranges.
[1]
Symbol Parameter Conditions Min Typ
[2]
Max Unit
f
osc
oscillator frequency 1 - 25 MHz
T
cy(clk)
clock cycle time 40 - 1000 ns
t
CHCX
clock HIGH time T
cy(clk)
 0.4 - - ns
t
CLCX
clock LOW time T
cy(clk)
 0.4 - - ns
t
CLCH
clock rise time - - 5 ns
t
CHCL
clock fall time - - 5 ns