Datasheet

NXP Semiconductors
NX7002AK
60 V, single N-channel Trench MOSFET
NX7002AK All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 6 August 2015 7 / 16
V
DS
(V)
0 431 2
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0.10
0.05
0.15
0.20
I
D
(A)
0
10 V
2.3 V
V
GS
= 2.0 V
2.5 V
3.0 V
4.5 V
T
j
= 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
017aaa470
V
GS
(V)
0 321
10
-4
10
-5
10
-3
I
D
(A)
10
-6
(1) (2) (3)
T
j
= 25 °C; V
DS
= 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
I
D
(A)
0 0.200.150.05 0.10
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4
6
2
8
10
R
DSon
(Ω)
0
3.0 V
4.5 V
10.0 V
2.0 V
2.5 V
2.3 V
T
j
= 25 °C
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
V
GS
(V)
0 1084 62
017aaa472
4
8
12
R
DSon
0
(1)
(2)
I
D
= 0.2 A
(1) T
j
= 150 °C
(2) T
j
= 25 °C
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values