Datasheet

NXP Semiconductors
NX7002AK
60 V, single N-channel Trench MOSFET
NX7002AK All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 6 August 2015 6 / 16
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C 60 - - V
V
GSth
gate-source threshold
voltage
I
D
= 250 µA; V
DS
= V
GS
; T
j
= 25 °C 1.1 1.6 2.1 V
V
DS
= 60 V; V
GS
= 0 V; T
j
= 25 °C - - 1 µAI
DSS
drain leakage current
V
DS
= 60 V; V
GS
= 0 V; T
j
= 150 °C - - 10 µA
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C - - 2 µA
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C - - -2 µA
V
GS
= 10 V; V
DS
= 0 V; T
j
= 25 °C - - 0.5 µA
V
GS
= -10 V; V
DS
= 0 V; T
j
= 25 °C - - -0.5 µA
V
GS
= 5 V; V
DS
= 0 V; T
j
= 25 °C - - 100 nA
I
GSS
gate leakage current
V
GS
= -5 V; V
DS
= 0 V; T
j
= 25 °C - - -100 nA
V
GS
= 10 V; I
D
= 100 mA; T
j
= 25 °C - 3 4.5 Ω
V
GS
= 10 V; I
D
= 100 mA; T
j
= 150 °C - 6.2 9.2 Ω
R
DSon
drain-source on-state
resistance
V
GS
= 5 V; I
D
= 100 mA; T
j
= 25 °C - 3.7 5.2 Ω
g
fs
forward
transconductance
V
DS
= 10 V; I
D
= 200 mA; T
j
= 25 °C - 500 - mS
Dynamic characteristics
Q
G(tot)
total gate charge - 0.33 0.43 nC
Q
GS
gate-source charge - 0.12 - nC
Q
GD
gate-drain charge
V
DS
= 30 V; I
D
= 200 mA; V
GS
= 4.5 V;
T
j
= 25 °C
- 0.09 - nC
C
iss
input capacitance - 15 20 pF
C
oss
output capacitance - 3.4 - pF
C
rss
reverse transfer
capacitance
V
DS
= 10 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
- 2 - pF
t
d(on)
turn-on delay time - 6 12 ns
t
r
rise time - 7 - ns
t
d(off)
turn-off delay time - 11 20 ns
t
f
fall time
V
DS
= 40 V; R
L
= 250 Ω; V
GS
= 10 V;
R
G(ext)
= 6 Ω; T
j
= 25 °C
- 5 - ns
Source-drain diode
V
SD
source-drain voltage I
S
= 115 mA; V
GS
= 0 V; T
j
= 25 °C 0.47 0.8 1.2 V