Datasheet

5.2 DDR pads
5.2.1 DDR3 mode
5.2.1.1 DDR3 mode DC electrical specifications
Table 13. DDR3 mode DC electrical specifications
Parameter Symbol Test
conditions
Min Typ Max Unit
High-level output voltage Voh Ioh=-100 μA 0.8*ovdd — — V
Low-level output voltage Vol Iol=100 μA — — 0.2*ovdd V
High-level DC input voltage Vih (DC) — Vref + 0.2 — ovdd V
High-level DC input voltage Vil (DC) — ovss — Vref - 0.2 V
Input reference voltage Vref — 0.49*ovdd 0.5*ovdd 0.51*ovdd V
Termination voltage
1
Vtt — 0.49*ovdd 0.5*ovdd 0.51*ovdd V
Input current (no pullup/pulldown)
2
Iin Vi = 0 or ovdd — — 5 μA
Pullup/pulldown impedance
mismatch
MMpupd 34 Ohm full
strength driver
-10 — +10 %
Driver 240 Ohm unit calibration
resolution
Rres — — — 10 Ω
Rkeep
3
Pad keeper
resistance
— 20 — 50 kΩ
1. Vtt is expected to track ovdd/2.
2. Typ condition: typ model, 1.5V, and 25 °C. Max condition: bcs model, 1.575V, and -40 °C. Min condition: wcs model,
1.425V, and 125 °C.
3. Typ condition: typ model, 1.5 V, and 25 °C, max condition: wcs model, 1.425 V, and 125 °C, min condition: bcs model,
1.575 V, and -40 °C.
5.2.2 DDR3L mode
5.2.2.1 DDR3L mode DC electrical specifications
Table 14. DDR3L mode DC electrical specifications
Parameter Symbol Test conditions Min Typ Max Unit
High-level output voltage Voh Ioh = -100 μA 0.8*ovdd — — V
Low-level output voltage Vol Iol = 100 μA — — 0.2*ovdd V
High-level DC input voltage Vih (DC) — Vref + 0.2 — ovdd V
High-level DC input voltage Vil (DC) — ovss — Vref - 0.2 V
Table continues on the next page...
General purpose I/O parameters
S32V234 Data Sheet, Rev. 8, 01/2019
18 NXP Semiconductors