Datasheet

NOTE
The maximum rise time for all GPIO pins is 1 ms. Input pins do
not support hysteresis, therefore very slow ramps (like the ones
generated by an RC circuit with a large RC value) can induce
bounces in the input read state during the transition from logic
low to logic high or vice versa.
5.1.2 DC electrical specifications
Table 11. DC electrical specifications
Symbol Parameter Test conditions Min Typ Max Unit
Voh High-level output voltage Ioh=-100 μA ovdd
1
-0.15 — — V
Vol Low-level output voltage Iol=100 μA — — 0.15 V
Vihf High-Level DC input voltage — 0.7*ovdd — ovdd V
Vil Low-Level DC input voltage — 0 — 0.2*ovdd V
Iin
2
Input current (no pull-up/down) Vin = ovdd or 0 — — 8 μA
Iin_33pu
2
Input current (33 kilohm PU) Vin = 0
Vin = ovdd
— — 220
6
μA
Iin_50pu
2
Input current (50 kilohm PU) Vin = 0
Vin = ovdd
— — 150
6
μA
Iin_100pu
2
Input current (100 kilohm PU) Vin = 0
Vin = ovdd
— — 60
6
μA
Iin_100pd
2
Input current (100 kilohm PD) Vin = 0
Vin = ovdd
— — 8
50
μA
1. ovdd is the IO supply for the pads.
2. Max condition: bcs model, 3.6 V, and 125 °C. These values are for I/O buffers.
NOTE
After bootup, application software should switch to manual
voltage detect mode using VSEL_x settings of SRC_GPR14
register to ensure optimum performance of the GPIO pads.
Please refer to SRC chapter in the Reference Manual for the
register details.
Table 12. Current-draw Characteristics for DDR_VREF
Symbol Parameter Min Max Unit
DDR_VREF Current-draw characteristics for
DDR_VREF
— 1 mA
General purpose I/O parameters
S32V234 Data Sheet, Rev. 8, 01/2019
NXP Semiconductors 17