Datasheet

i.MX RT1015 Crossover Processors Data Sheet for Consumer Products, Rev. 0.1, 03/2019
14 NXP Semiconductors
Electrical characteristics
4 Electrical characteristics
This section provides the device and module-level electrical characteristics for the i.MX RT1015
processors.
4.1 Chip-level conditions
This section provides the device-level electrical characteristics for the IC. See Table 6 for a quick reference
to the individual tables and sections.
4.1.1 Absolute maximum ratings
CAUTION
Stress beyond those listed under Table 7 may cause permanent damage to the device. These are stress
ratings only. Functional operation of the device at these or any other conditions beyond those indicated
under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated
conditions for extended periods may affect device reliability.
Table 7 shows the absolute maximum operating ratings.
Table 6. i.MX RT1015 chip-Level conditions
For these characteristics Topic appears
Absolute maximum ratings on page 14
Thermal resistance on page 15
Operating ranges on page 16
External clock sources on page 17
Maximum supply currents on page 18
Low power mode supply currents on page 19
USB PHY current consumption on page 19
Table 7. Absolute maximum ratings
Parameter Description Symbol Min Max Unit
Core supplies input voltage VDD_SOC_IN -0.3 1.6 V
VDD_HIGH_IN supply voltage VDD_HIGH_IN -0.3 3.7 V
Power for DCDC DCDC_IN -0.3 3.6 V
Supply input voltage to Secure Non-Volatile Storage
and Real Time Clock
VDD_SNVS_IN -0.3 3.6 V
USB VBUS supply USB_OTG1_VBUS — 5.5 V
Supply for 12-bit ADC VDDA_ADC 3 3.6 V
IO supply for GPIO bank (3.3 V mode) NVCC_GPIO 3 3.6 V