Datasheet

MF1S5009 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet
PUBLIC
Rev. 3 — 27 July 2010
189131 5 of 32
NXP Semiconductors
MF1S5009
Mainstream contactless smart card IC
[1] The gap between chips may vary due to changing foil expansion.
[2] Pads P1, TP2 and VSS are disconnected when wafer is sawn.
7.1 Fail die identification
Electronic wafer mapping covers the electrical test results and additionally the results of
mechanical/visual inspection.
No ink dots are applied.
gap between chips
[1]
typical = 15 μm
minimum = 5 μm
Passivation
type sandwich structure
material nitride
thickness 1.75 μm
Au bump (substrate connected to VSS)
material
> 99.9 % pure Au
hardness 35 to 80 HV 0.005
shear strength >70 MPa
height 18 μm
height uniformity within a die = ±2 μm
within a wafer = ±3 μm
wafer to wafer = ±4 μm
flatness minimum = ±1.5 μm
size LA, LB = 69 μm × 69 μm
P1;TP2;VSS
[2]
=58 μm × 58 μm
size variation ±5 μm
under bump metallization sputtered TiW
Table 3. Specifications