Datasheet

MF1S5009 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet
PUBLIC
Rev. 3 — 27 July 2010
189131 25 of 32
NXP Semiconductors
MF1S5009
Mainstream contactless smart card IC
12. Limiting values
[1] Stresses above one or more of the limiting values may cause permanent damage to the device
[2] Exposure to limiting values for extended periods may affect device reliability
[3] MIL Standard 883-C method 3015; Human body model: C = 100 pF, R = 1.5 kΩ
13. Characteristics
[1] Stresses above one or more of the values may cause permanent damage to the device.
[2] Exposure to limiting values for extended periods may affect device reliability.
[3] LCR meter, T
amb
= 22 °C, f
i
= 13.56 MHz, 2.8 V RMS.
Table 20. MIFARE Transfer command
Name Code Description Length
Cmd B0h Write value into destination block 1 byte
Addr - MIFARE destination block address
(00h to FFh)
1 byte
CRC - CRC according to Ref. 4
2 bytes
NAK see Table 9
see Section 10.3 4-bit
Table 21. MIFARE Transfer timing
These times exclude the end of communication of the PCD.
T
ACK
min T
ACK
max T
NAK min
T
NAK max
T
TimeOut
Transfer 71 μsT
TimeOut
71 μsT
TimeOut
10 ms
Table 22. Limiting values
[1][2]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Min Max Unit
I
I
input current - 30 mA
P
tot
/pack total power dissipation per package - 200 mW
T
stg
storage temperature −55 +125 °C
T
amb
ambient temperature −25 +70 °C
V
ESD
electrostatic discharge voltage
[3]
2- kV
I
lu
latch-up current ±100 - mA
Table 23. Characteristics
[1][2]
Symbol Parameter Conditions Min Typ Max Unit
C
i
input capacitance
[3]
15.0 17.0 19.0 pF
f
i
input frequency - 13.56 - MHz
EEPROM characteristics
t
ret
retention time T
amb
= 22 °C 10 - - year
N
endu(W)
write endurance T
amb
= 22 °C 100000 200000 - cycle