Datasheet
Electrical characteristics
i.MX 8QuadXPlus and 8DualXPlus Automotive and Infotainment Applications Processors, Rev. 0, 11/2018
PRELIMINARY NXP Semiconductors36
Input current (no PU/PD) I
IN
V
I
= 0, V
I
= OVDD
PUN = "H", PDN = "H"
-5 5 μA
Keeper Circuit Resistance R_Keeper V
I
=.3xOVDD, VI = .7x OVDD
PUN = "L", PDN = "L"
15 90 kΩ
1
See .Tabl e 35
2
Overshoot and undershoot conditions (transitions above OVDD and below GND) on switching pads must be held below 0.3 V,
and the duration of the overshoot/undershoot must not exceed 10% of the system clock cycle. Overshoot/ undershoot must
be controlled through printed circuit board layout, transmission line impedance matching, signal line termination, or other
methods. Noncompliance to this specification may affect device reliability or cause permanent damage to the device. (OVDD
is the IO supply.)
3
To maintain a valid level, the transition edge of the input must sustain a constant slew rate (monotonic) from the current DC
level through to the target DC level, V
IL
or V
IH
. Monotonic input transition time is from 0.1 ns to 1 ns.
Table 29. Single-voltage 3.3 V GPIO DC parameters
Parameter Symbol Test Conditions
1
1
See Tabl e 36
Min Max Units
High-level output voltage
2
2
Overshoot and undershoot conditions (transitions above OVDD and below GND) on switching pads must be held below 0.3 V,
and the duration of the overshoot/undershoot must not exceed 10% of the system clock cycle. Overshoot/ undershoot must be
controlled through printed circuit board layout, transmission line impedance matching, signal line termination, or other
methods. Noncompliance to this specification may affect device reliability or cause permanent damage to the device. (OVDD
is the IO supply.)
V
OH
I
OH
= -0.1mA
DSE = 00 or 01
0.8 × OVDD — V
I
OH
= -2mA
DSE = 10 or 11
Low-level output voltage
2
V
OL
I
OL
=0.1mA
DSE = 00 or 01
—0.2× OVDD V
I
OL
= 2mA
DSE = 10 or 11
High-Level input voltage
2,3
V
IH
—0.75× OVDD OVDD V
Low-Level input voltage
2,3
V
IL
—00.25× OVDD V
Input Hysteresis V
HYS
— 100 — mV
Pull-upresistance R
PU
Vin=0 V (Pullup Resistor)
PUN = "L", PDN = "H"
20 90 kΩ
Pull-down resistance R
down
Vin=OVDD( Pulldown Resistor)
PUN = "H", PDN = "L"
20 90 kΩ
Input current (no PU/PD) I
IN
V
I
= 0, V
I
= OVDD
PUN = "H", PDN = "H"
-5 5 μA
Keeper Circuit Resistance R_Keeper V
I
=.3xOVDD, VI = .7x OVDD
PUN = "L", PDN = "L"
990kΩ
Table 28. Single-voltage 1.8 V GPIO DC parameters (continued)
Parameter Symbol Test Conditions
1
Min Max Units