Datasheet

Electrical characteristics
i.MX 8QuadXPlus and 8DualXPlus Automotive and Infotainment Applications Processors, Rev. 0, 11/2018
PRELIMINARYNXP Semiconductors 33
4.5 I/O DC Parameters
This section includes the DC parameters of the following I/O types:
• XTALI and RTC_XTALI (clock inputs) DC parameters
• General Purpose I/O (GPIO) DC parameters
NOTE
The term ‘OVDD’ in this section refers to the associated supply rail of an
input or output.
Figure 3. Circuit for Parameters Voh and Vol for I/O Cells
4.5.1 XTALI and RTC_XTALI (Clock Inputs) DC Parameters
For RTC_XTALI, V
IH
/V
IL
specifications do not apply. The high and low levels of the applied clock on
this pin are not strictly defined, as long as the input’s peak-to-peak amplitude meet the requirements and
the input’s voltage value does not exceed the limits.
4.5.2 General-purpose I/O (GPIO) DC parameters
4.5.2.1 Dual-voltage GPIO DC parameters
The following two tables show dual-voltage 1.8 V and 3.3 V DC parameters, respectively, for GPIO
pads. These parameters are guaranteed per the operating ranges in Table 6, unless otherwise noted.
4
The rise/fall time of the applied clock are not strictly confined.
Table 26. Dual-voltage GPIO 3.3V DC parameters
1
(IO PSW is set to 1.8 V Range)
Parameter Symbol Test Conditions
2
Min Max Units
High-level output voltage
3
V
OH
Ioh= -0.1mA
DSE=1
0.8 × OVDD — V
Ioh= -2mA
DSE=0
0
or
1
Predriver
pdat
ovdd
pad
nmos (Rpd)
ovss
Voh min
Vol max
pmos (Rpu)