Datasheet

i.MX 8M Dual / 8M QuadLite / 8M Quad Applications Processors Data Sheet for Industrial Products, Rev. 0, 01/2018
28 NXP Semiconductors
Electrical characteristics
3.5 I/O DC parameters
This section includes the DC parameters of the following I/O types:
• General Purpose I/O (GPIO)
• Double Data Rate I/O (DDR) for LPDDR4, DDR4, and DDR3L modes
• Differential I/O (CLKx)
3.5.1 General purpose I/O (GPIO) DC parameters
Table 25 shows DC parameters for GPIO pads. The parameters in Table 25 are guaranteed per the
operating ranges in Table 7, unless otherwise noted.
Table 25. GPIO DC parameters
Parameter Symbol Test Conditions Min Typ Max Unit
High-level output voltage V
OH (1.8 V)
Min V
DD
,
I
OH
= –100 A,
I
OH
= –2 mA
V
DD
- 0.2,
V
DD
- 0.45
——V
V
OH (3.3 V)
VDD - 0.2
2.4
——V
Low-level output voltage V
OL (1.8 V)
Min V
DD
,
I
OH
= 100 A,
I
OH
= 3 mA
——0.2
0.2 x V
DD
V
V
OL (3.3 V)
——0.2
0.4
V
High-level input voltage V
IH (1.8 V)
ipp_lvttl_en = 0 0.7 x V
DD
—V
DD
V
V
IH (3.3 V)
ipp_lvttl_en = 1 2 — V
DD
V
V
IH_1VCOMS
(3.3 V)
ipp_lvttl_en = 0 0.7 x V
DD
—V
DD
V
Low-level input voltage V
IL
(1.8 V) ipp_lvttl_en = 0 0 — 0.2 x V
DD
V
V
IL_emmc
(1.8 V)
ipp_lvttl_en = 0 0 — 0.35 x V
DD
V
V
IL
(3.3 V) ipp_lvttl_en = 1 0 — 0.8 V
V
IL_emmc
(3.3 V)
ipp_lvttl_en = 0 0 — 0.25 x V
DD
V
V
IL_1vcmos
(3.3 V)
ipp_lvttl_en = 0 0 — 0.2 x V
DD
V
Input hysteresis V
HYS
(1.8 V) ipp_hys = 1 — 0.15 — V
V
HYS
(3.3 V) ipp_hys = 1 — 0.2 — V
Pull-up resistor — — 29 x 0.75 29 29 x 1.25 K
Pull-down resistor — — 95 x 0.8 95 95 x 1.2 K
High level input current I
IH
—-50—50A
Low level input current I
IL
—-50—50A