Datasheet

i.MX 8M Dual / 8M QuadLite / 8M Quad Applications Processors Data Sheet for Industrial Products, Rev. 0, 01/2018
14 NXP Semiconductors
Electrical characteristics
3.1.2 Thermal resistance
3.1.2.1 FPBGA package thermal resistance
Table 6 displays the thermal resistance data.
GPIO supply voltage NVCC_JTAG, NVCCGPIO1,
NVCC_ENT, NVCC_SD1,
NVCC_SD2, NVCC_NAND,
NVCC_SA1, NVCC_SAI2,
NVCC_SAI3, NVCC_SAI5,
NVCC_ECSPI, NVCC_I2C,
NVCC_UART
0 3.6 V 1.8 V
mode/3.3 V
mode
SNVS IO supply voltage NVCC_SNVS 0 3.6 V 3.3 V mode
only
VDD_SNVS supply voltage VDD_SNVS 0 0.99 V
USB high supply voltage USB1_VDD33, USB1_VPH,
USB2_VDD33, USB2_VPH
03.63V
USB_VBUS input detected USB1_VBUS,
USB2_VBUS
05.25V
Input voltage on USB*_DP,
USB*_DN pins
USB1_DP/USB1_DN
USB2_DP/USB2_DN
0 USB1_VDD33
USB2_VDD33
V—
Input/output voltage range V
in
/V
out
0OVDD
1
+0.3 V
ESD damage immunity: V
esd
V
Human Body Model (HBM)
Charge Device Model (CDM)
2000
500
Storage temperature range T
STORAGE
–40 150
o
C—
1
OVDD is the I/O supply voltage.
Table 6. Thermal resistance data
Rating Test conditions Symbol
17 x 17
pkg value
Unit
Junction to Ambient
1
1
Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board)
temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal
resistance.
Single-layer board (1s); natural convection
2
Four-layer board (2s2p); natural convection
2
R
JA
R
JA
Bare die: 16.4
o
C/W
o
C/W
Junction to Ambient
1
Single-layer board (1s); airflow 200 ft/min
2,3
Four-layer board (2s2p); airflow 200 ft/min
2,3
R
JA
R
JA
Bare die: 13.9
o
C/W
o
C/W
Junction to Board
1,4
—R
JB
Bare die: 4.6
o
C/W
Junction to Case
1,5
—R
JC
Bare die: 0.1
o
C/W
Table 5. Absolute maximum ratings (continued)
Parameter description Symbol Min Max Unit Notes