Datasheet

NXP Semiconductors 7
10XS3435
5 Electrical characteristics
5.1 Maximum ratings
Table 4. Maximum ratings
All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or permanent damage
to the device.
Ratings Symbol Value Unit
ELECTRICAL RATINGS
V
PWR
supply voltage range
• Load dump at 25 °C (400 ms)
• Maximum operating voltage
• Reverse battery
V
PWR(SS)
41
28
-18
V
V
DD
supply voltage range
V
DD
-0.3 to 5.5 V
Input / output voltage
(7)
-0.3 to V
DD
+ 0.3
V
WAKE input clamp current
I
CL(WAKE)
2.5 mA
CSNS input clamp current
I
CL(CSNS)
2.5 mA
HS [0:3] voltage
• Positive
• Negative
V
HS[0:3]
41
-24
V
Output current
(4)
I
HS[0:3]
6.0 A
HS[0,1] output clamp energy using single pulse method
(5)
E
CL [0:1]
100 mJ
HS[2,3] output clamp energy using single pulse method
(5)
E
CL [2:3]
35 mJ
ESD voltage
(6)
• Human Body Model (HBM) for HS[0:3], VPWR and GND
• Human Body Model (HBM) for other pins
• Charge Device Model (CDM)
Corner pins (1, 13, 19, 21)
All other pins (2-12, 14-18, 20, 22-24)
V
ESD1
V
ESD2
V
ESD3
V
ESD4
± 8000
± 2000
± 750
± 500
V
THERMAL RATINGS
Operating temperature
•Ambient
•Junction
T
A
T
J
- 40 to 125
- 40 to 150
°C
Storage temperature
T
STG
- 55 to 150 °C
Notes
4. Continuous high-side output current rating so long as maximum junction temperature is not exceeded. Calculation of maximum output current
using package thermal resistance is required.
5. Active clamp energy using single-pulse method (L = 2.0 mH, R
L
= 0 Ohm, V
PWR
= 14 V, T
J
= 150 °C initial).
6. ESD testing is performed in accordance with the Human Body Model (HBM) (C
ZAP
= 100 pF, R
ZAP
= 1500 Ohm), the Machine Model (MM) (C
ZAP
= 200
pF, R
ZAP
= 0 Ohm), and the Charge Device Model (CDM), Robotic (C
ZAP
= 4.0 pF).
7. Input/Output pins are: IN[0:3], RST, FSI, CSNS, SI, SCLK, CS, SO, FS