Datasheet

18 NXP Semiconductors
10XS3435
POWER OUTPUT TIMING HS0 TO HS3 (continued)
HS[0,1] output overcurrent time step for 28 W bit = 1
HS[2,3] output overcurrent time step
OC[1:0] = 00 (slow by default)
OC[1:0] = 01 (fast)
OC[1:0] = 10 (medium)
OC[1:0] = 11 (very slow)
t
OC1_00
t
OC2_00
t
OC3_00
t
OC4_00
t
OC5_00
t
OC6_00
t
OC7_00
t
OC1_01
t
OC2_01
t
OC3_01
t
OC4_01
t
OC5_01
t
OC6_01
t
OC7_01
t
OC1_10
t
OC2_10
t
OC3_10
t
OC4_10
t
OC5_10
t
OC6_10
t
OC7_10
t
OC1_11
t
OC2_11
t
OC3_11
t
OC4_11
t
OC5_11
t
OC6_11
t
OC7_11
3.4
1.1
1.4
2.0
3.4
8.5
62.4
0.86
0.28
0.36
0.51
0.78
2.14
20.2
1.7
0.5
0.7
1.0
1.7
4.2
31.2
6.8
2.2
2.9
4.0
6.8
17.0
124.8
4.9
1.6
2.1
2.9
4.9
12.2
89.2
1.24
0.40
0.52
0.74
1.12
3.06
22.2
2.5
0.8
1.0
1.5
2.5
6.1
44.6
9.8
3.2
4.2
5.8
9.8
24.4
178.4
6.4
2.1
2.8
3.8
6.4
15.9
116.0
1.61
0.52
0.68
0.96
1.46
3.98
28.9
3.3
1.0
1.3
2.0
3.3
6.0
58.0
12.8
16.7
5.5
7.6
12.8
31.8
232.0
ms
Table 6. Dynamic electrical characteristics (continued)
Characteristics noted under conditions 6.0 V ≤ V
PWR
≤ 20 V, 3.0 V ≤ V
DD
≤ 5.5 V, - 40 °C ≤ T
A
≤ 125 °C, GND = 0 V unless otherwise
noted. Typical values noted reflect the approximate parameter means at T
A
= 25°C under nominal conditions unless otherwise noted.
Characteristic Symbol Min Typ Max Unit