Datasheet

14 NXP Semiconductors
10XS3435
CONTROL INTERFACE
Input logic high voltage
(23)
V
IH
2.0
V
DD
+0.3
V
Input logic low voltage
(23)
V
IL
-0.3 0.8 V
Input logic pull-down current (SCLK, SI)
(26)
I
DWN
5.0 20 μA
Input logic pull-up current (CS)
(27)
I
UP
5.0 20 μA
SO, FS tri-state capacitance
(24)
C
SO
20 pF
Input logic pull-down resistor (RST, WAKE and IN[0:3])
R
DWN
125 250 500 kOhm
Input capacitance
(24)
C
IN
4.0 12 pF
Wake input clamp voltage
(25)
, I
CL(WAKE)
< 2.5 mA
10XS3435B
10XS3435D
V
CL(WAKE)
18
20
25
27
32
35
V
Wake input forward voltage
•I
CL(WAKE)
= -2.5 mA
V
F(WAKE)
- 2.0 - 0.3
V
SO high-state output voltage
•I
OH
= 1.0 mA
V
SOH
V
DD
-0.4
V
SO and FS low-state output voltage
•I
OL
= -1.0 mA
V
SOL
0.4
V
SO, CSNS and FS Tri-state leakage current
CS = V
IH
and 0 V < V
SO
< V
DD
, or FS = 5.5 V, or CSNS = 0.0 V
I
SO(LEAK)
- 2.0 0 2.0
μA
FSI external pull-down resistance
(28)
Watchdog disabled
Watchdog enabled
RFS
10
0
Infinite
1.0
kOhm
Notes
23. Upper and lower logic threshold voltage range applies to SI, CS, SCLK, RST, IN[0:3] and WAKE input signals. The WAKE and RST signals may
be supplied by a derived voltage referenced to V
PWR
.
24. Input capacitance of SI, CS, SCLK, RST, IN[0:3] and WAKE. This parameter is guaranteed by process monitoring but is not production tested.
25. The current must be limited by a series resistance when using voltages > 7.0 V.
26. Pull-down current is with V
SI
> 1.0 V and V
SCLK
> 1.0 V.
27. Pull-up current is with V
CS
< 2.0 V. CS has an active internal pull-up to V
DD
.
28. In Fail-Safe HS[0:3] depends respectively on ON[0:3]. FSI has an active internal pull-up to V
REG
~ 3.0 V.
Table 5. Static electrical characteristics (continued)
Characteristics noted under conditions 6.0 V V
PWR
20 V, 3.0 V V
DD
5.5 V, - 40 °C T
A
125 °C, GND = 0 V unless otherwise
noted. Typical values noted reflect the approximate parameter means at T
A
= 25°C under nominal conditions unless otherwise noted.
Characteristic Symbol Min Typ Max Unit