Datasheet

10 NXP Semiconductors
10XS3435
OUTPUTS HS0 TO HS3
HS[0,1] output Drain-to-Source ON resistance (I
HS
= 5.0 A, T
A
= 25 °C)
•V
PWR
= 4.5 V
•V
PWR
= 6.0 V
•V
PWR
= 10 V
•V
PWR
= 13 V
R
DS_01(ON)
–
–
–
–
–
–
–
–
36
16
10
10
mOhm
HS[0,1] output Drain-to-Source ON resistance (I
HS
= 5.0 A, T
A
= 150 °C)
•V
PWR
= 4.5 V
•V
PWR
= 6.0 V
•V
PWR
= 10 V
•V
PWR
= 13 V
R
DS_01(ON)
–
–
–
–
–
–
–
–
62
27
17
17
mOhm
HS[0,1] output Source-to-Drain ON resistance (I
HS
= -5.0 A, V
PWR
= -18)
(15)
•T
A
= 25 °C
•T
A
= 150 °C
R
SD_01(ON)
–
–
–
–
15
20
mOhm
HS[2,3] output Drain-to-Source ON resistance (I
HS
= 5.0 A, T
A
= 25 °C)
•V
PWR
= 4.5 V
•V
PWR
= 6.0 V
•V
PWR
= 10 V
•V
PWR
= 1.0 V
R
DS_23(ON)
–
–
–
–
–
–
–
–
126
56
35
35
mOhm
HS[2,3] output Drain-to-Source ON resistance (I
HS
= 5.0 A, T
A
= 150 °C)
•V
PWR
= 4.5 V
•V
PWR
= 6.0 V
•V
PWR
= 10 V
•V
PWR
= 13 V
R
DS_23(ON)
–
–
–
–
–
–
–
–
217
94.5
59.5
59.5
mOhm
HS[2,3] output Source-to-Drain ON resistance (I
HS
= -5.0 A, V
PWR
= -18)
(15)
•T
A
= 25°C
•T
A
= 150°C
R
SD_23(ON)
–
–
–
–
52.5
70
mOhm
HS[0,1] maximum severe short-circuit impedance detection
(16)
R
SHORT_01
28 64 100 mOhm
HS[2,3] maximum severe short-circuit impedance detection
(16)
R
SHORT_23
70 160 200 mOhm
Notes
15. Source-Drain ON resistance (reverse Drain-to-Source ON resistance) with negative polarity V
PWR
.
16. Short-circuit impedance calculated from HS[0:3] to GND pins. Value guaranteed per design.
Table 5. Static electrical characteristics (continued)
Characteristics noted under conditions 6.0 V ≤ V
PWR
≤ 20 V, 3.0 V ≤ V
DD
≤ 5.5 V, - 40 °C ≤ T
A
≤ 125 °C, GND = 0 V unless otherwise
noted. Typical values noted reflect the approximate parameter means at T
A
= 25°C under nominal conditions unless otherwise noted.
Characteristic Symbol Min Typ Max Unit