Datasheet

LPC84x All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2018. All rights reserved.
Product data sheet Rev. 1.7 — 27 February 2018 60 of 97
NXP Semiconductors
LPC84x
32-bit Arm Cortex-M0+ microcontroller
12. Dynamic characteristics
12.1 Flash memory
[1] Number of program/erase cycles.
[2] Programming times are given for writing 64 bytes to the flash. T
amb
<= +85 C. Flash programming with IAP
calls (see LPC84x user manual).
12.2 FRO
[1] Typical ratings are not guaranteed. The values listed are at room temperature (25 C), nominal supply
voltages.
Table 16. Flash characteristics
T
amb
=  40  C to +105  C. Based on JEDEC NVM qualification. Failure rate < 10 ppm for parts as
specified below.
Symbol Parameter Conditions Min Typ Max Unit
N
endu
endurance
[1]
10000 100000 - cycles
t
ret
retention time powered 10 20 - years
not powered 20 40 - years
t
er
erase time page or multiple
consecutive pages,
sector or multiple
consecutive
sectors
95 100 105 ms
t
prog
programming
time
[2]
0.95 1 1.05 ms
Table 17. Dynamic characteristic: FRO
T
amb
=  40  C to +105  C; 1.8 V  V
DD
 3.6 V.
Symbol Min Typ
[1]
Max Unit
FRO clock frequency; Condition: 0 C  T
amb
 70 C
f
osc(RC)
18 -1 % 18 18 +1 % MHz
f
osc(RC)
24 -1 % 24 24 +1 % MHz
f
osc(RC)
30 -1 % 30 30 +1 % MHz
FRO clock frequency; Condition: 20 C  T
amb
 70 C
f
osc(RC)
18 -2 % 18 18 +1 % MHz
f
osc(RC)
24 -2 % 24 24 +1 % MHz
f
osc(RC)
30 -2 % 30 30 +1 % MHz
FRO clock frequency; Condition: 40 C  T
amb
 105 C
f
osc(RC)
18 -3.5 % 18 18 +2.5 % MHz
f
osc(RC)
24 -3.5 % 24 24 +2.5 % MHz
f
osc(RC)
30 -3.5 % 30 30 +2.5 % MHz