Datasheet

LPC55S6x All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2019. All rights reserved.
Product data sheet Rev. 1.0 — 26 February 2019 83 of 123
NXP Semiconductors
LPC55S6x
32-bit ARM Cortex-M33 microcontroller
11. Dynamic characteristics
11.1 Flash memory
[1] Number of erase/program cycles.
11.2 I/O pins
Table 22. Flash characteristics
T
amb
= 40 C to +105 C, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
N
endu
endurance Page erase/program,
T
amb
= 40 C to +85 C
[1]
100000 - - cycles
Mass erase/program,
T
amb
= 40 C to +85 C
100000 - - cycles
Page erase/program
T
amb
= 40 C to +105 C,
10000 - - cycles
Mass erase/program
T
amb
= 40 C to +105 C,
10000 - - cycles
t
ret
retention time powered 10 - - years
unpowered at 85 C > 25 - - years
unpowered at 105 C 15 - - years
t
er
erase time 1 page (512 Bytes) - 21 - ms
t
prog
programming
time
- 1.09 - ms
Table 23. Dynamic characteristic: I/O pins
[1]
T
amb
= 40 C to +105 C; 1.8 V  V
DD
 3.6 V
Symbol Parameter Conditions Min Typ Max Unit
Standard I/O pins - normal drive strength
t
r
rise time pin configured as output; SLEW = 1
(Fast-mode);
2.7 V  V
DD
 3.6 V
[2][3]
<tbd> - <tbd> ns
1.8 V  V
DD
 2.7 V <tbd> - <tbd> ns
t
f
fall time pin configured as output; SLEW = 1
(Fast-mode);
2.7 V  V
DD
 3.6 V
[2][3]
<tbd> - <tbd> ns
1.8 V  V
DD
 2.7 V <tbd> - <tbd> ns
t
r
rise time pin configured as output; SLEW = 0
(standard mode);
2.7 V  V
DD
 3.6 V
[2][3]
<tbd> - <tbd> ns
1.8 V  V
DD
 2.7 V <tbd> - <tbd> ns
t
f
fall time pin configured as output; SLEW = 0
(standard mode);
2.7 V  V
DD
 3.6 V
[2][3]
<tbd> - <tbd> ns
1.8 V  V
DD
 2.7 V <tbd> - <tbd> ns
t
r
rise time pin configured as input
[4]
<tbd> - <tbd> ns
t
f
fall time pin configured as input
[4]
<tbd> - <tbd> ns