Datasheet
i.MX 6DualPlus/6QuadPlus Automotive Applications Processors, Rev. 3, 11/2018
40 NXP Semiconductors
Electrical Characteristics
4.6.3 DDR I/O DC Parameters
The DDR I/O pads support LPDDR2 and DDR3/DDR3L operational modes.
To date LPDDR2 has not been fully validated or supported in the BSP. For further details contact your local
NXP representative.
Table 22. GPIO I/O DC Parameters
Parameter Symbol Test Conditions Min Max Unit
High-level output voltage
1
1
Overshoot and undershoot conditions (transitions above OVDD and below GND) on switching pads must be held below 0.6 V,
and the duration of the overshoot/undershoot must not exceed 10% of the system clock cycle. Overshoot/ undershoot must be
controlled through printed circuit board layout, transmission line impedance matching, signal line termination, or other methods.
Non-compliance to this specification may affect device reliability or cause permanent damage to the device.
Voh Ioh = -0.1 mA (DSE
2
= 001, 010)
Ioh = -1 mA
(DSE = 011, 100, 101, 110, 111)
2
DSE is the Drive Strength Field setting in the associated IOMUX control register.
OVDD – 0.15 — V
Low-level output voltage
1
Vol Iol = 0.1 mA (DSE
2
= 001, 010)
Iol = 1mA
(DSE = 011, 100, 101, 110, 111)
—0.15V
High-Level DC input voltage
1,
3
3
To maintain a valid level, the transition edge of the input must sustain a constant slew rate (monotonic) from the current DC
level through to the target DC level, Vil or Vih. Monotonic input transition time is from 0.1 ns to 1 s.
Vih — 0.7
× OVDD OVDD V
Low-Level DC input voltage
1,
3
Vil — 0 0.3 × OVDD V
Input Hysteresis Vhys OVDD = 1.8 V
OVDD = 3.3 V
0.25 — V
Schmitt trigger VT+
3, 4
4
Hysteresis of 250 mV is guaranteed over all operating conditions when hysteresis is enabled.
VT+ — 0.5
× OVDD — V
Schmitt trigger VT–
3, 4
VT– — — 0.5 × OVDD V
Input current (no pull-up/down) Iin Vin = OVDD or 0 -1 1 μA
Input current (22 kΩ pull-up) Iin Vin = 0 V
Vin = OVDD
—212
1
μA
Input current (47 kΩ pull-up) Iin Vin = 0 V
Vin = OVDD
—100
1
μA
Input current (100 kΩ pull-up) Iin Vin = 0 V
Vin= OVDD
—48
1
μA
Input current (100 kΩ pull-down) Iin Vin = 0 V
Vin = OVDD
—1
48
μA
Keeper circuit resistance Rkeep Vin = 0.3 x OVDD
Vin = 0.7 x OVDD
105 175
kΩ