Datasheet

January 1995 3
Philips Semiconductors Product specification
Triple 3-input AND gate
HEF4073B
gates
AC CHARACTERISTICS
V
SS
= 0 V; T
amb
=25°C; C
L
= 50 pF; input transition times ≤ 20 ns
V
DD
V
SYMBOL TYP. MAX.
TYPICAL EXTRAPOLATION
FORMULA
Propagation delays
I
n
→ O
n
5 55 110 ns 23 ns + (0,55 ns/pF) C
L
HIGH to LOW 10 t
PHL
25 50 ns 14 ns + (0,23 ns/pF) C
L
15 20 40 ns 12 ns + (0,16 ns/pF) C
L
5 45 90 ns 13 ns + (0,55 ns/pF) C
L
LOW to HIGH 10 t
PLH
20 40 ns 9 ns + (0,23 ns/pF) C
L
15 15 30 ns 7 ns + (0,16 ns/pF) C
L
Output transition times 5 60 120 ns 10 ns + (1,0 ns/pF) C
L
HIGH to LOW 10 t
THL
30 60 ns 9 ns + (0,42 ns/pF) C
L
15 20 40 ns 6 ns + (0,28 ns/pF) C
L
5 60 120 ns 10 ns + (1,0 ns/pF) C
L
LOW to HIGH 10 t
TLH
30 60 ns 9 ns + (0,42 ns/pF) C
L
15 20 40 ns 6 ns + (0,28 ns/pF) C
L
V
DD
V
TYPICAL FORMULA FOR P (µW)
Dynamic power 5 600 f
i
+∑(f
o
C
L
) × V
DD
2
where
dissipation per 10 2700 f
i
+∑(f
o
C
L
) × V
DD
2
f
i
= input freq. (MHz)
package (P) 15 8400 f
i
+∑(f
o
C
L
) × V
DD
2
f
o
= output freq. (MHz)
C
L
= load capacitance (pF)
∑ (f
o
C
L
) = sum of outputs
V
DD
= supply voltage (V)