Datasheet

January 1995 3
Philips Semiconductors Product specification
Quadruple bilateral switches
HEF4066B
gates
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
DC CHARACTERISTICS
T
amb
=25°C
Power dissipation per switch P max. 100 mW
For other RATINGS see Family Specifications
V
DD
V
SYMBOL MIN. TYP. MAX. CONDITIONS
ON resistance
5
R
ON
− 350 2500 Ω E
n
at V
DD
10 − 80 245 Ω V
is
=V
SS
to V
DD
15 − 60 175 Ω see Fig.4
ON resistance
5
R
ON
− 115 340 Ω E
n
at V
DD
10 − 50 160 Ω V
is
=V
SS
15 − 40 115 Ω see Fig.4
ON resistance
5
R
ON
− 120 365 Ω E
n
at V
DD
10 − 65 200 Ω V
is
=V
DD
15 − 50 155 Ω see Fig.4
‘∆’ ON resistance 5
∆R
ON
− 25 −Ω E
n
at V
DD
between any two 10 − 10 −Ω V
is
=V
SS
to V
DD
channels 15 − 5 −Ω see Fig.4
OFF state leakage 5
I
OZ
−−−nA
E
n
at V
SS
current, any 10 −−−nA
channel OFF 15 −−200 nA
E
n
input voltage 5
V
IL
− 2,25 1 V
I
is
=10µA
see Fig.9
LOW 10 − 4,50 2 V
15 − 6,75 2 V
V
DD
V
SYMBOL T
amb
(°c) CONDITIONS
−40 +25 +85
MAX. MAX. MAX.
Quiescent device 5
I
DD
1,0 1,0 7,5 µAV
SS
= 0; all valid
current 10 2,0 2,0 15,0 µA input combinations;
15 4,0 4,0 30,0 µAV
I
=V
SS
or V
DD
Input leakage current at E
n
15 ± I
IN
− 300 1000 nA E
n
at V
SS
or V
DD