Datasheet

HEF4017B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 8 — 18 November 2011 7 of 18
NXP Semiconductors
HEF4017B
5-stage Johnson decade counter
10. Dynamic characteristics
I
OH
HIGH-level
output current
V
O
= 2.5 V 5 V - 1.7 - 1.4 - 1.1 - 1.1 mA
V
O
= 4.6 V 5 V - 0.64 - 0.5 - 0.36 - 0.36 mA
V
O
= 9.5 V 10 V - 1.6 - 1.3 - 0.9 - 0.9 mA
V
O
= 13.5 V 15 V - 4.2 - 3.4 - 2.4 - 2.4 mA
I
OL
LOW-level
output current
V
O
= 0.4 V 5 V 0.64 - 0.5 - 0.36 - 0.36 - mA
V
O
= 0.5 V 10 V 1.6 - 1.3 - 0.9 - 0.9 - mA
V
O
= 1.5 V 15 V 4.2 - 3.4 - 2.4 - 2.4 - mA
I
I
input leakage
current
15 V - 0.1 - 0.1 - 1.0 - 1.0 A
I
DD
supply current I
O
= 0 A;
V
I
= V
SS
or V
DD
5 V - 5 - 5 - 150 - 150 A
10 V - 10 - 10 - 300 - 300 A
15 V - 20 - 20 - 600 - 600 A
C
I
input
capacitance
----7.5----pF
Table 6. Static characteristics …continued
V
SS
= 0 V; V
I
= V
SS
or V
DD
unless otherwise specified.
Symbol Parameter Conditions V
DD
T
amb
= 40 C T
amb
= 25 C T
amb
= 85 C T
amb
= 125 C Unit
Min Max Min Max Min Max Min Max
Table 7. Dynamic characteristics
T
amb
= 25  C; V
SS
= 0 V; for test circuit see Figure 10
Symbol Parameter Conditions V
DD
Extrapolation formula
[1]
Min Typ Max Unit
t
PHL
HIGH to LOW
propagation delay
CP0, CP1  Q0 to Q9;
see Figure 7
5 V 113 ns + (0.55 ns/pF)C
L
- 140 280 ns
10 V 44 ns + (0.23 ns/pF)C
L
-55110ns
15 V 32 ns + (0.16 ns/pF)C
L
-4080ns
CP0, CP
1  Q5-9;
see Figure 7
5 V 118 ns + (0.55 ns/pF)C
L
- 145 290 ns
10 V 44 ns + (0.23 ns/pF)C
L
-55110ns
15 V 32 ns + (0.16 ns/pF)C
L
-4080ns
MR  Q1 to Q9;
see Figure 8
5 V 88 ns + (0.55 ns/pF)C
L
- 115 230 ns
10 V 39 ns + (0.23 ns/pF)C
L
- 50 100 ns
15 V 27 ns + (0.16 ns/pF)C
L
-3570ns