Datasheet

HEF4017B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 8 — 18 November 2011 6 of 18
NXP Semiconductors
HEF4017B
5-stage Johnson decade counter
[1] For DIP16 package: P
tot
derates linearly with 12 mW/K above 70 C.
[2] For SO16 package: P
tot
derates linearly with 8 mW/K above 70 C.
8. Recommended operating conditions
9. Static characteristics
I
DD
supply current - 50 mA
T
stg
storage temperature 65 +150 C
T
amb
ambient temperature 40 +125 C
P
tot
total power dissipation T
amb
= 40 C to +125 C
DIP16 package
[1]
-750mW
SO16 package
[2]
-500mW
P power dissipation per output - 100 mW
Table 4. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Table 5. Recommended operating conditions
Symbol Parameter Conditions Min Typ Max Unit
V
DD
supply voltage 3 - 15 V
V
I
input voltage 0 - V
DD
V
T
amb
ambient temperature in free air 40 - +125 C
t/V input transition rise and fall rate V
DD
= 5 V --3.75s/V
V
DD
= 10 V --0.5s/V
V
DD
= 15 V --0.08s/V
Table 6. Static characteristics
V
SS
= 0 V; V
I
= V
SS
or V
DD
unless otherwise specified.
Symbol Parameter Conditions V
DD
T
amb
= 40 C T
amb
= 25 C T
amb
= 85 C T
amb
= 125 C Unit
Min Max Min Max Min Max Min Max
V
IH
HIGH-level
input voltage
I
O
 < 1 A 5 V 3.5 - 3.5 - 3.5 - 3.5 - V
10 V 7.0 - 7.0 - 7.0 - 7.0 - V
15 V 11.0 - 11.0 - 11.0 - 11.0 - V
V
IL
LOW-level
input voltage
I
O
 < 1 A 5V -1.5-1.5-1.5-1.5V
10V -3.0-3.0-3.0-3.0V
15V -4.0-4.0-4.0-4.0V
V
OH
HIGH-level
output voltage
I
O
 < 1 A;
V
I
=V
SS
or V
DD
5 V 4.95 - 4.95 - 4.95 - 4.95 - V
10 V 9.95 - 9.95 - 9.95 - 9.95 - V
15 V 14.95 - 14.95 - 14.95 - 14.95 - V
V
OL
LOW-level
output voltage
I
O
 < 1 A;
V
I
=V
SS
or V
DD
5 V - 0.05 - 0.05 - 0.05 - 0.05 V
10 V - 0.05 - 0.05 - 0.05 - 0.05 V
15 V - 0.05 - 0.05 - 0.05 - 0.05 V