Datasheet

January 1995 3
Philips Semiconductors Product specification
Quadruple 2-input NOR gate
HEF4001B
gates
AC CHARACTERISTICS
V
SS
= 0 V; T
amb
=25°C; C
L
= 50 pF; input transition times ≤ 20 ns
V
DD
V
SYMBOL TYP MAX
TYPICAL EXTRAPOLATION
FORMULA
Propagation delays
I
n
→ O
n
5 60 120 ns 33 ns + (0,55 ns/pF) C
L
HIGH to LOW 10 t
PHL
25 50 ns 14 ns + (0,23 ns/pF) C
L
15 20 40 ns 12 ns + (0,16 ns/pF) C
L
5 50 100 ns 23 ns + (0,55 ns/pF) C
L
LOW to HIGH 10 t
PLH
25 45 ns 14 ns + (0,23 ns/pF) C
L
15 20 35 ns 12 ns + (0,16 ns/pF) C
L
Output transition times 5 60 120 ns 10 ns + (1,0 ns/pF) C
L
HIGH to LOW 10 t
THL
30 60 ns 9 ns + (0,42 ns/pF) C
L
15 20 40 ns 6 ns + (0,28 ns/pF) C
L
5 60 120 ns 10 ns + (1,0 ns/pF) C
L
LOW to HIGH 10 t
TLH
30 60 ns 9 ns + (0,42 ns/pF) C
L
15 20 40 ns 6 ns + (0,28 ns/pF) C
L
V
DD
V
TYPICAL FORMULA FOR P (µW)
Dynamic power 5 1100 f
i
+ ∑ (f
o
C
L
) × V
DD
2
where
dissipation per 10 5000 f
i
+ ∑ (f
o
C
L
) × V
DD
2
f
i
= input freq. (MHz)
package (P) 15 14 200 f
i
+ ∑ (f
o
C
L
) × V
DD
2
f
o
= output freq. (MHz)
C
L
= load capacitance (pF)
∑(f
o
C
L
) = sum of outputs
V
DD
= supply voltage (V)