Datasheet

Table 41. Voltage and current operating requirements (continued)
Symbol Description Min. Max. Unit Notes
• 2.7 V ≤ V
DD
≤ 3.6 V
• 1.7 V ≤ V
DD
≤ 2.7 V
— 0.3 × V
DD
V
V
HYS
Input hysteresis 0.06 × V
DD
— V
I
ICcont
Contiguous pin DC injection current —regional limit,
includes sum of negative injection currents or sum of
positive injection currents of 16 contiguous pins
• Negative current injection
• Positive current injection
-25
—
—
+25
mA
V
RAM
V
DD
voltage required to retain RAM 1.2 — V
V
RFVBAT
V
BAT
voltage required to retain the VBAT register file V
POR_VBAT
— V
1. The ripple limit for USB_V
DD
is 100 mV.
5.3.2.2 LVD and POR operating requirements
Table 42. V
DD
supply LVD and POR operating requirements
Symbol Description Min. Typ. Max. Unit Notes
V
POR
Falling VDD POR detect voltage 0.8 1.1 1.5 V
V
LVDH
Falling low-voltage detect threshold — high
range (LVDV=01)
2.48 2.56 2.64 V
V
LVW1H
V
LVW2H
V
LVW3H
V
LVW4H
Low-voltage warning thresholds — high range
• Level 1 falling (LVWV=00)
• Level 2 falling (LVWV=01)
• Level 3 falling (LVWV=10)
• Level 4 falling (LVWV=11)
2.62
2.72
2.82
2.92
2.70
2.80
2.90
3.00
2.78
2.88
2.98
3.08
V
V
V
V
1
V
HYSH
Low-voltage inhibit reset/recover hysteresis —
high range
— 60 — mV
V
LVDL
Falling low-voltage detect threshold — low
range (LVDV=00)
1.54 1.60 1.66 V
V
LVW1L
V
LVW2L
V
LVW3L
V
LVW4L
Low-voltage warning thresholds — low range
• Level 1 falling (LVWV=00)
• Level 2 falling (LVWV=01)
• Level 3 falling (LVWV=10)
• Level 4 falling (LVWV=11)
1.74
1.84
1.94
2.04
1.80
1.90
2.00
2.10
1.86
1.96
2.06
2.16
V
V
V
V
1
V
HYSL
Low-voltage inhibit reset/recover hysteresis —
low range
— 40 — mV
V
BG
Bandgap voltage reference 0.97 1.00 1.03 V
t
LPO
Internal low power oscillator period — factory
trimmed
900 1000 1100 μs
Electrical characteristics
70
Kinetis KL82 Microcontroller, Rev. 3, 08/2016
NXP Semiconductors