Datasheet

Table 66. QuadSPI output timing (Hyperflash mode) specifications (continued)
Symbol Parameter Value Unit
Min Max
Tho Output Data Hold 1.3 — ns
Tclk
SKMAX
Ck to Ck2 skew max — T/4 + 0.5 ns
Tclk
SKMIN
Ck to Ck2 skew min T/4 - 0.5 — ns
NOTE
Maximum clock frequency = 72 MHz.
5.4.3.2 Flash electrical specifications
This section describes the electrical characteristics of the flash memory module.
5.4.3.2.1 Flash timing specifications — program and erase
The following specifications represent the amount of time the internal charge pumps are
active and do not include command overhead.
Table 67. NVM program/erase timing specifications
Symbol Description Min. Typ. Max. Unit Notes
t
hvpgm4
Longword Program high-voltage time — 7.5 18 μs —
t
hversscr
Sector Erase high-voltage time — 13 113 ms 1
t
hversall
Erase All high-voltage time — 104 904 ms 1
1. Maximum time based on expectations at cycling end-of-life.
5.4.3.2.2 Flash timing specifications — commands
Table 68. Flash command timing specifications
Symbol Description Min. Typ. Max. Unit Notes
t
rd1sec2k
Read 1s Section execution time (flash sector) — — 60 μs 1
t
pgmchk
Program Check execution time — — 45 μs 1
t
rdrsrc
Read Resource execution time — — 30 μs 1
t
pgm4
Program Longword execution time — 65 145 μs —
t
ersscr
Erase Flash Sector execution time — 14 114 ms 2
t
rd1all
Read 1s All Blocks execution time — — 0.9 ms 1
t
rdonce
Read Once execution time — — 30 μs 1
t
pgmonce
Program Once execution time — 100 — μs —
t
ersall
Erase All Blocks execution time — 140 1150 ms 2
Table continues on the next page...
Electrical characteristics
100
Kinetis KL82 Microcontroller, Rev. 3, 08/2016
NXP Semiconductors