Datasheet

MMA8652FC
Sensors
Freescale Semiconductor, Inc. 9
2.3 Electrical characteristics
Table 5. Electrical characteristics at VDD = 2.5 V, VDDIO = 1.8 V, T = 25°C, unless otherwise noted
Parameter Symbol Test Conditions Min Typ Max Unit
Supply voltage VDD 1.95 2.5 3.6 V
Interface supply voltage VDDIO 1.62 1.8 3.6 V
Low Power mode I
dd
LP
ODR = 1.563 Hz 6.5
μA
ODR = 6.25 Hz 6.5
ODR = 12.5 Hz 6.5
ODR = 50 Hz 15
ODR = 100 Hz 26
ODR = 200 Hz 49
ODR = 400 Hz 94
ODR = 800 Hz 184
Normal mode I
dd
ODR = 1.563 Hz 27
μA
ODR = 6.25 Hz 27
ODR = 12.5 Hz 27
ODR = 50 Hz 27
ODR = 100 Hz 49
ODR = 200 Hz 94
ODR = 400 Hz 184
ODR = 800 Hz 184
Boot-Up current I
ddBoot
VDD = 2.5 V, the current during
the Boot sequence is integrated
over 0.5 ms, using a
recommended bypass cap
1mA
Value of capacitor on BYP pin Cap –40°C to 85°C 75 100 470 nF
Standby current I
ddStby
25°C 1.4 5 μA
Digital high-level input voltage
SCL, SDA VIH VDD = 3.6 V, VDDIO = 3.6 V 0.7*VDDIO
V
Digital low-level input voltage
SCL, SDA VIL VDD = 1.95 V, VDDIO = 1.62 V
0.3*VDDIO
V
High-level output voltage
INT1, INT2 VOH VDD = 3.6 V, VDDIO = 3.6 V,
I
O
= 500 μA
0.9*VDDIO V
Low-level output voltage
INT1, INT2 VOL VDD = 1.95 V, VDDIO = 1.62 V,
I
O
= 500 μA
0.1*VDDIO V
Low-level output voltage
SDA VOLS I
O
= 3 mA 0.4
V
Output source current INT1, INT2 I
source
Voltage high level
VOUT = 0.9 x VDDIO
2mA
Output sink current INT1, INT2 I
sink
Voltage high level
VOUT = 0.9 x VDDIO
3mA
Power-on ramp time Tpr 0.001 1000 ms
Boot time Tbt
Time from VDDIO on and
VDD > VDD min until I
2
C is
ready for operation,
Cbyp = 100 nf
350 500 µs
Turn-on time Ton1
Time to obtain valid data from
Standby mode to Active mode
2/ODR + 1 ms -
Turn-on time Ton2
Time to obtain valid data from
valid voltage applied
2/ODR + 2 ms
-
Operating temperature range T
AGOC
–40 85 °C