Datasheet

Table 26. Percentage of sample exceeding specified value of jitter (continued)
N Percentage of samples exceeding specified value of jitter
(%)
4 6.30 × 1e-03
5 5.63 × 1e-05
6 2.00 × 1e-07
7 2.82 × 1e-10
Memory interfaces
4.3.1 Flash memory program and erase specifications
NOTE
All timing, voltage, and current numbers specified in this
section are defined for a single embedded flash memory within
an SoC, and represent average currents for given supplies and
operations.
Table 27 shows the estimated Program/Erase times.
Table 27. Flash memory program and erase specifications
Symbol Characteristic
1
Typ
2
Factory
Programming
3, 4
Field Update Unit
Initial
Max
Initial
Max, Full
Temp
Typical
End of
Life
5
Lifetime Max
6
20°C ≤T
A
≤30°C
-40°C ≤T
J
≤150°C
-40°C ≤T
J
≤150°C
≤ 1,000
cycles
≤ 250,000
cycles
t
dwpgm
Doubleword (64 bits) program time 43 100 150 55 500 μs
t
ppgm
Page (256 bits) program time 73 200 300 108 500 μs
t
qppgn
Quad-page (1024 bits) program
time
268 800 1,200 396 2,000 μs
t
16kers
16 KB Block erase time 168 290 320 250 1,000 ms
t
16kpgn
16 KB Block program time 34 45 50 40 1,000 ms
t
32kers
32 KB Block erase time 217 360 390 310 1,200 ms
t
32kpgm
32 KB Block program time 69 100 110 90 1,200 ms
t
64kers
64 KB Block erase time 315 490 590 420 1,600 ms
t
64kpgm
64 KB Block program time 138 180 210 170 1,600 ms
t
256kers
256 KB Block erase time 884 1,520 2,030 1,080 4,000 — ms
t
256kpgm
256 KB Block program time 552 720 880 650 4,000 — ms
4.3
Memory interfaces
MPC5748G Microcontroller Datasheet Data Sheet, Rev. 2, 05/2014.
Freescale Semiconductor, Inc.
Preliminary
31