Datasheet

BZX84J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 1 August 2011 6 of 13
NXP Semiconductors
BZX84J series
Single Zener diodes
[1] f = 1 MHz; V
R
=0V
[2] t
p
= 100 s; square wave; T
j
=25C prior to surge
Table 9. Characteristics per type; BZX84J-B27 to BZX84J-C75
T
j
=25  C unless otherwise specified.
BZX84J-
xxx
Sel Working
voltage
V
Z
(V)
Differential
resistance
r
dif
()
Reverse
current
I
R
(A)
Temperature
coefficient
S
Z
(mV/K)
Diode
capacitance
C
d
(pF)
[1]
Non-repetitive
peak reverse
current
I
ZSM
(A)
[2]
I
Z
=2mA I
Z
=0.5mA I
Z
=2mA I
Z
=2mA
Min Max Max Max Max V
R
(V) Min Max Max Max
27 B 26.5 27.5 250 40 0.05 18.9 21.4 25.3 73 1
C 25.1 28.9
30 B 29.4 30.6 250 40 0.05 21 24.4 29.4 66 1
C2832
33 B 32.3 33.7 275 40 0.05 23.1 27.4 33.4 60 0.9
C3135
36 B 35.3 36.7 300 60 0.05 25.2 30.4 37.4 59 0.8
C3438
39 B 38.2 39.8 300 75 0.05 27.3 33.4 41.2 58 0.7
C3741
43 B 42.1 43.9 325 80 0.05 30.1 37.6 46.6 56 0.6
C4046
47 B 46.1 47.9 325 90 0.05 32.9 42 51.8 55 0.5
C4450
51 B 50 52 350 110 0.05 35.7 46.6 57.2 52 0.4
C4854
56 B 54.9 57.1 375 120 0.05 39.2 52.2 63.8 49 0.3
C5260
62 B 60.8 63.2 400 140 0.05 43.4 58.8 71.6 44 0.3
C5866
68 B 66.6 69.4 400 160 0.05 47.6 65.6 79.8 40 0.25
C6472
75 B 73.5 76.5 400 175 0.05 52.5 73.4 88.6 35 0.2
C7079