Datasheet

BZX84J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 1 August 2011 4 of 13
NXP Semiconductors
BZX84J series
Single Zener diodes
Table 8. Characteristics per type; BZX84J-B2V4 to BZX84J-C24
T
j
=25  C unless otherwise specified.
BZX84J-
xxx
Sel Working
voltage
V
Z
(V)
Differential
resistance
r
dif
()
Reverse
current
I
R
(A)
Temperature
coefficient
S
Z
(mV/K)
Diode
capacitance
C
d
(pF)
[1]
Non-repetitive
peak reverse
current
I
ZSM
(A)
[2]
I
Z
=5mA I
Z
=1mA I
Z
=5mA I
Z
=5mA
Min Max Max Max Max V
R
(V) Min Max Max Max
2V4 B 2.35 2.45 400 100 50 1 3.5 0 450 12
C2.22.6
2V7 B 2.65 2.75 450 100 20 1 3.5 0 440 12
C2.52.9
3V0 B 2.94 3.06 500 95 10 1 3.5 0 425 12
C2.83.2
3V3 B 3.23 3.37 500 95 5 1 3.5 0 410 12
C3.13.5
3V6 B 3.53 3.67 500 90 5 1 3.5 0 390 12
C3.43.8
3V9 B 3.82 3.98 500 90 3 1 3.5 0 370 12
C3.74.1
4V3 B 4.21 4.39 600 90 3 1 3.5 0 350 12
C4 4.6
4V7 B 4.61 4.79 500 80 3 2 3.5 0.2 325 12
C4.45
5V1 B 5 5.2 480 60 2 2 2.7 1.2 300 12
C4.85.4
5V6 B 5.49 5.71 400 40 1 2 22.5275 12
C5.26
6V2 B 6.08 6.32 150 10 3 4 0.4 3.7 250 12
C5.86.6
6V8 B 6.66 6.94 80 15 2 4 1.2 4.5 215 12
C6.47.2
7V5 B 7.35 7.65 80 10 1 5 2.5 5.3 170 4
C7 7.9
8V2 B 8.04 8.36 80 10 0.7 5 3.2 6.2 150 4
C7.78.7
9V1 B 8.92 9.28 100 10 0.5 6 3.8 7 120 3
C8.59.6
10 B 9.8 10.2 150 10 0.2 7 4.5 8 110 3
C 9.4 10.6
11 B 10.8 11.2 150 10 0.1 8 5.4 9 108 2.5
C 10.4 11.6
12 B 11.8 12.2 150 10 0.1 8 6 10 105 2.5
C 11.4 12.7