Datasheet
BZX84J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 1 August 2011 3 of 13
NXP Semiconductors
BZX84J series
Single Zener diodes
5. Limiting values
[1] t
p
=100s; square wave; T
j
=25C prior to surge
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 1 cm
2
.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[2] Soldering point of cathode tab.
7. Characteristics
[1] Pulse test: t
p
300 s; 0.02.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
I
F
forward current - 250 mA
I
ZSM
non-repetitive peak reverse
current
[1]
-see
Table 8
and 9
P
ZSM
non-repetitive peak reverse
power dissipation
[1]
-40W
P
tot
total power dissipation T
amb
25 C
[2]
-550mW
T
j
junction temperature - 150 C
T
amb
ambient temperature 55 +150 C
T
stg
storage temperature 65 +150 C
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 230 K/W
R
th(j-sp)
thermal resistance from
junction to solder point
[2]
--55K/W
Table 7. Characteristics
T
j
=25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage
[1]
I
F
=10mA --0.9V
I
F
= 100 mA - - 1.1 V