Datasheet

BZX84_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 6 — 6 March 2014 7 of 16
NXP Semiconductors
BZX84 series
Voltage regulator diodes
[1] f = 1 MHz; V
R
=0V
[2] t
p
= 100 s; square wave; T
j
=25C before surge
24 A 23.76 24.24 60 250 25 70 0.05 16.8 18.4 20.4 22.0 55 1.25
B 23.5 24.5
C 22.8 25.6
Table 8. Characteristics per type; BZX84-A2V4 to BZX84-C24
…continued
T
j
=25  C unless otherwise specified.
BZX84-
xxx
Sel Working
voltage
V
Z
(V)
Differential resistance
r
dif
()
Reverse
current
I
R
(A)
Temperature
coefficient
S
Z
(mV/K)
Diode
capacitance
C
d
(pF)
[1]
Non-repetitive
peak reverse
current
I
ZSM
(A)
[2]
I
Z
=5mA I
Z
=1mA I
Z
=5mA I
Z
=5mA
Min Max Typ Max Typ Max Max V
R
(V) Min Typ Max Max Max
Table 9. Characteristics per type; BZX84-A27 to BZX84-C75
T
j
=25  C unless otherwise specified.
BZX84-
xxx
Sel Working
voltage
V
Z
(V)
Differential resistance
r
dif
()
Reverse
current
I
R
(A)
Temperature
coefficient
S
Z
(mV/K)
Diode
capacitance
C
d
(pF)
[1]
Non-repetitive
peak reverse
current
I
ZSM
(A)
[2]
I
Z
=2mA I
Z
=0.5mA I
Z
=2mA I
Z
=2mA
Min Max Typ Max Typ Max Max V
R
(V) Min Typ Max Max Max
27 A 26.73 27.27 65 300 25 80 0.05 18.9 21.4 23.4 25.3 50 1.0
B 26.5 27.5
C 25.1 28.9
30 A 29.7 30.30 70 300 30 80 0.05 21 24.4 26.6 29.4 50 1.0
B 29.4 30.6
C 28.0 32.0
33 A 32.67 33.33 75 325 35 80 0.05 23.1 27.4 29.7 33.4 45 0.9
B 32.3 33.7
C 31.0 35.0
36 A 35.64 36.36 80 350 35 90 0.05 25.2 30.4 33.0 37.4 45 0.8
B 35.3 36.7
C 34.0 38.0
39 A 38.61 39.39 80 350 40 130 0.05 27.3 33.4 36.4 41.2 45 0.7
B 38.2 39.8
C 37.0 41.0
43 A 42.57 43.43 85 375 45 150 0.05 30.1 37.6 41.2 46.6 40 0.6
B 42.1 43.9
C 40.0 46.0
47 B 46.1 47.9 85 375 50 170 0.05 32.9 42.0 46.1 51.8 40 0.5
C 44.0 50.0
51 A 50.49 51.51 90 400 60 180 0.05 35.7 46.6 51.0 57.2 40 0.4
B 50.0 52.0
C 48.0 54.0