Datasheet

2003 Apr 10 4
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX84 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed circuit-board.
ELECTRICAL CHARACTERISTICS
Total BZX84-A and B and C series
T
j
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
continuous forward current − 200 mA
I
ZSM
non-repetitive peak reverse current t
p
= 100 μs; square wave;
T
j
= 25 °C prior to surge
see Tables
1 and 2
P
tot
total power dissipation T
amb
= 25 °C; note 1 − 250 mW
P
ZSM
non-repetitive peak reverse power
dissipation
t
p
= 100 μs; square wave;
T
j
= 25 °C prior to surge; see Fig.2
− 40 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage I
F
= 10 mA; see Fig.3 0.9 V
I
R
reverse current
BZX84-A/B/C2V4 V
R
= 1 V 50 μA
BZX84-A/B/C2V7 V
R
= 1 V 20 μA
BZX84-A/B/C3V0 V
R
= 1 V 10 μA
BZX84-A/B/C3V3 V
R
= 1 V 5 μA
BZX84-A/B/C3V6 V
R
= 1 V 5 μA
BZX84-A/B/C3V9 V
R
= 1 V 3 μA
BZX84-A/B/C4V3 V
R
= 1 V 3 μA
BZX84-A/B/C4V7 V
R
= 2 V 3 μA
BZX84-A/B/C5V1 V
R
= 2 V 2 μA
BZX84-A/B/C5V6 V
R
= 2 V 1 μA
BZX84-A/B/C6V2 V
R
= 4 V 3 μA
BZX84-A/B/C6V8 V
R
= 4 V 2 μA
BZX84-A/B/C7V5 V
R
= 5 V 1 μA
BZX84-A/B/C8V2 V
R
= 5 V 700 nA
BZX84-A/B/C9V1 V
R
= 6 V 500 nA
BZX84-A/B/C10 V
R
= 7 V 200 nA
BZX84-A/B/C11 V
R
= 8 V 100 nA
BZX84-A/B/C12 V
R
= 8 V 100 nA
BZX84-A/B/C13 V
R
= 8 V 100 nA
BZX84-A/B/C15 to 75 V
R
= 0.7V
Znom
50 nA