DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BZX84 series Voltage regulator diodes Product data sheet Supersedes data of 1999 May 18 2003 Apr 10
NXP Semiconductors Product data sheet Voltage regulator diodes BZX84 series FEATURES PINNING • Total power dissipation: max. 250 mW PIN DESCRIPTION • Three tolerance series: ±1%, ±2% and approx. ±5% 1 anode • Working voltage range: nom. 2.4 to 75 V (E24 range) 2 not connected • Non-repetitive peak reverse power dissipation: max. 40 W. 3 cathode APPLICATIONS • General regulation functions. handbook, halfpage 2 1 DESCRIPTION 2 n.c.
NXP Semiconductors Product data sheet Voltage regulator diodes BZX84 series MARKING TYPE NUMBER MARKING CODE(1) TYPE NUMBER MARKING CODE(1) TYPE NUMBER MARKING CODE(1) TYPE NUMBER MARKING CODE(1) Y70 BZX84-A43 Y80 or ∗C5 Y71 BZX84-A47 Marking codes for BZX84-A2V4 to BZX84-A75 BZX84-A2V4 Y50 or ∗50 BZX84-A6V2 Y60 or ∗60 BZX84-A16 BZX84-A2V7 Y51 or ∗51 BZX84-A6V8 Y61 or ∗61 BZX84-A18 BZX84-A3V0 Y52 or ∗52 BZX84-A7V5 Y62 or ∗62 BZX84-A20 BZX84-A3V3 Y53 BZX84-A8V2 Y63 or ∗63
NXP Semiconductors Product data sheet Voltage regulator diodes BZX84 series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. − MAX.
DIFFERENTIAL RESISTANCE rdif (Ω) TEMP. COEFF. SZ (mV/K) at IZtest = 5 mA (see Figs 4 and 5) Tol. ±1% (A) Tol. ±2% (B) Tol. approx. ±5% (C) at IZtest = 1 mA at IZtest = 5 mA MIN. MIN. MIN. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. MAX. DIODE CAP. NON-REPETITIVE Cd (pF) PEAK REVERSE CURRENT at f = 1 MHz; VR = 0 V IZSM (A) at tp = 100 μs; Tamb = 25 °C MAX. MAX. 5 2.43 2.35 2.45 2.2 2.6 275 600 70 100 −3.5 −1.6 0 450 6.0 2V7 2.67 2.73 2.65 2.75 2.5 2.
DIFFERENTIAL RESISTANCE rdif (Ω) 6 Tol. ±1% (A) Tol. ±2% (B) Tol. approx. ±5% (C) MIN. MAX. MIN. MAX. MIN. 27 26.73 27.27 26.50 27.50 25.1 28.9 30 29.70 30.30 29.40 30.60 28.0 33 32.67 33.33 32.30 33.70 31.0 36 35.64 36.36 35.30 36.70 39 38.61 39.39 38.20 43 42.57 43.43 42.10 47 46.53 47.47 51 50.49 56 55.44 62 MAX. TEMP. COEFF. SZ (mV/K) at IZtest = 2 mA (see Figs 4 and 5) at at IZtest = 0.5 mA IZtest = 2 mA TYP. DIODE CAP.
NXP Semiconductors Product data sheet Voltage regulator diodes BZX84 series THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Device mounted on an FR4 printed circuit-board.
NXP Semiconductors Product data sheet Voltage regulator diodes BZX84 series GRAPHICAL DATA MBG781 MBG801 103 handbook, halfpage 300 handbook, halfpage PZSM (W) IF (mA) 102 200 (1) 10 100 (2) 1 10−1 1 duration (ms) 0 0.6 10 (1) Tj = 25 °C (prior to surge). (2) Tj = 150 °C (prior to surge). Tj = 25 °C. Fig.2 Fig.3 Maximum permissible non-repetitive peak reverse power dissipation versus duration. 0.8 1 VF (V) Forward current as a function of forward voltage; typical values.
NXP Semiconductors Product data sheet Voltage regulator diodes BZX84 series PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
NXP Semiconductors Product data sheet Voltage regulator diodes BZX84 series DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
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