Datasheet
BZV55_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 26 January 2011 7 of 13
NXP Semiconductors
BZV55 series
Voltage regulator diodes
(1) T
j
=25C (prior to surge)
(2) T
j
= 150 C (prior to surge)
T
j
=25C
Fig 2. Non-repetitive peak reverse power dissipation
as a function of pulse duration; maximum
values
Fig 3. Forward current as a function of forward
voltage; typical values
BZV55-B/C2V4 to BZV55-B/C4V3
T
j
=25C to 150 C
BZV55-B/C4V7 to BZV55-B/C12
T
j
=25C to 150 C
Fig 4. Temperature coefficient as a function of
working current; typical values
Fig 5. Temperature coefficient as a function of
working current; typical values
mbg801
10
3
1
t
p
(ms)
P
ZSM
(W)
10
10
2
10
−1
10
1
(1)
(2)
V
F
(V)
0.6 10.8
mbg781
100
200
300
I
F
(mA)
0
060
0
−2
−3
−1
mbg783
20 40
I
Z
(mA)
S
Z
(mV/K)
4V3
3V9
3V6
3V0
2V4
2V7
3V3
02016
10
0
−5
5
mbg782
4812
I
Z
(mA)
S
Z
(mV/K)
4V7
12
11
10
9V1
8V2
7V5
6V8
6V2
5V6
5V1