Datasheet

BZV55_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 26 January 2011 3 of 13
NXP Semiconductors
BZV55 series
Voltage regulator diodes
7. Characteristics
Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab072
t
p
(ms)
10
−1
10
4
10
5
10
3
10
2
110
10
2
10
10
3
Z
th(j-a)
(K/W)
1
δ = 1
0.75
0.33
0.05
0.02
0.01
0.50
0.20
0.10
≤ 0.001
Table 7. Characteristics
T
j
=25  C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage I
F
=10mA --0.9V
I
R
reverse current
BZV55-B/C2V4 V
R
=1V --50A
BZV55-B/C2V7 V
R
=1V --20A
BZV55-B/C3V0 V
R
=1V --10A
BZV55-B/C3V3 V
R
=1V --5A
BZV55-B/C3V6 V
R
=1V --5A
BZV55-B/C3V9 V
R
=1V --3A
BZV55-B/C4V3 V
R
=1V --3A
BZV55-B/C4V7 V
R
=2V --3A
BZV55-B/C5V1 V
R
=2V --2A
BZV55-B/C5V6 V
R
=2V --1A
BZV55-B/C6V2 V
R
=4V --3A
BZV55-B/C6V8 V
R
=4V --2A
BZV55-B/C7V5 V
R
=5V --1A
BZV55-B/C8V2 V
R
=5V --700nA
BZV55-B/C9V1 V
R
=6V --500nA
BZV55-B/C10 V
R
=7V --200nA
BZV55-B/C11 V
R
=8V --100nA
BZV55-B/C12 V
R
=8V --100nA
BZV55-B/C13 V
R
=8V --100nA
BZV55-B/C15 to BZV55-B/C75 V
R
=0.7V
Z(nom)
--50nA