Datasheet
BZV55_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 26 January 2011 2 of 13
NXP Semiconductors
BZV55 series
Voltage regulator diodes
3. Ordering information
[1] The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.
4. Marking
5. Limiting values
[1] t
p
=100s; square wave; T
j
=25C prior to surge
[2] Device mounted on a ceramic substrate of 10 10 0.6 mm.
6. Thermal characteristics
[1] Device mounted on a ceramic substrate of 10 10 0.6 mm.
Table 3. Ordering information
Type number Package
Name Description Version
BZV55-B2V4 to
BZV55-C75
[1]
- hermetically sealed glass surface-mounted
package; 2 connectors
SOD80C
Table 4. Marking codes
Type number Marking code
BZV55-B2V4 to BZV55-C75 marking band
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
I
F
forward current - 250 mA
I
ZSM
non-repetitive peak
reverse current
[1]
-see
Table 8
and 9
P
ZSM
non-repetitive peak
reverse power dissipation
[1]
-40W
P
tot
total power dissipation T
amb
50 C
[2]
-400mW
T
tp
50 C
[2]
-500mW
T
stg
storage temperature 65 +200 C
T
j
junction temperature 65 +200 C
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 380 K/W
R
th(j-sp)
thermal resistance from
junction to solder point
- - 300 K/W