Datasheet

BYW29E-200 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 20 March 2012 5 of 11
NXP Semiconductors
BYW29E-200
Ultrafast power diode
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
F
forward voltage I
F
=8A; T
j
=25°C; see Figure 4 - 0.92 1.05 V
I
F
=20A; T
j
=25°C; see Figure 4 -1.11.3V
I
F
=8A; T
j
= 150 °C; see Figure 4 - 0.8 0.895 V
I
R
reverse current V
R
= 200 V; T
j
=25°C - 2 10 µA
V
R
= 200 V; T
j
= 100 °C - 0.2 0.6 mA
Dynamic characteristics
Q
r
recovered charge I
F
=2A; V
R
=30V; dI
F
/dt = 20 A/s;
T
j
= 25 °C; see Figure 5; see Figure 6
-411nC
t
rr
reverse recovery time I
F
=1A; V
R
=30V; dI
F
/dt = 100 A/s;
ramp recovery; T
j
=25°C; see Figure 5;
see Figure 7
- 2025ns
I
F
= 0.5 A; I
R
= 1 A; step recovery;
I
R(meas)
=0.25A; T
j
=25°C; see Figure 8
- 1520ns
V
FRM
forward recovery voltage I
F
=1A; dI
F
/dt = 10 A/s; T
j
=25°C;
see Figure 9
-1-V
Fig 4. Forward current as a function of forward
voltage
Fig 5. Reverse recovery definitions; ramp recovery
V
F
(V)
021.50.5 1
003aaj509
10
20
30
I
F
(A)
0
(1) (2) (3)
003aac562
t
rr
time
100 %
25 %
I
F
dl
F
dt
I
R
I
RM
Q
r