Datasheet

BYW29E-200 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 20 March 2012 2 of 11
NXP Semiconductors
BYW29E-200
Ultrafast power diode
2. Pinning information
3. Ordering information
4. Limiting values
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 K cathode
SOD59 (TO-220AC)
2 A anode
mb mb mounting base; cathode
mb
12
A
001aaa020
K
Table 3. Ordering information
Type number Package
Name Description Version
BYW29E-200 TO-220AC plastic single-ended package; heatsink mounted; 1 mounting
hole; 2-lead TO-220AC
SOD59
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
RRM
repetitive peak reverse voltage - 200 V
V
RWM
crest working reverse voltage - 200 V
V
R
reverse voltage - 200 V
I
F(AV)
average forward current square-wave pulse; δ =0.5; T
mb
≤ 128 °C;
see Figure 1
; see Figure 2
-8A
I
FRM
repetitive peak forward current square-wave pulse; δ = 0.5 ; t
p
= 25 µs;
T
mb
≤ 128 °C
-16A
I
FSM
non-repetitive peak forward
current
t
p
= 8.3 ms; sine-wave pulse; T
j(init)
=25°C - 88 A
t
p
= 10 ms; sine-wave pulse; T
j(init)
=25°C - 80 A
I
RRM
repetitive peak reverse current δ = 0.001 ; t
p
=2µs - 0.2 A
I
RSM
non-repetitive peak reverse
current
t
p
= 100 µs - 0.2 A
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 150 °C
Electrostatic discharge
V
ESD
electrostatic discharge voltage HBM; C = 250 pF; R = 1.5 kΩ -8kV