Datasheet

Philips Semiconductors Product specification
TrenchMOS transistor BUK9575-100A
Logic level FET BUK9675-100A
Fig.5. Typical output characteristics, T
j
= 25 ˚C.
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 ˚C.
R
DS(ON)
= f(V
GS
); conditions: I
D
= 25 A;
Fig.7. Typical on-state resistance, T
j
= 25 ˚C.
R
DS(ON)
= f(V
GS
); conditions: I
D
= 25 A;
Fig.8. Typical on-state resistance, T
j
= 25 ˚C.
R
DS(ON)
= f(V
GS
); conditions: I
D
= 25 A;
Fig.9. Typical transfer characteristics.
I
D
= f(V
GS
) ; conditions: V
DS
= 25 V; parameter T
j
Fig.10. Typical transconductance, T
j
= 25 ˚C.
g
fs
= f(I
D
); conditions: V
DS
= 25 V
0
10
20
30
40
50
60
0246810
VDS/V
ID/A
2.8
3.0
5.0
10.0
V
GS/V =
3
.2
2
.2
3.6
3.8
2.4
2
.6
4
.0
3.4
50
55
60
65
70
75
345678910
VGS/V
RDS(ON) Ohm
40
50
60
70
80
90
100
110
120
130
140
10 15 20 25 30 35 40
ID/A
RDS(ON)/mOhm
4
.2
4.6
4.8
4.0
4
.4
5
.0
0
5
10
15
20
25
0.0 1.0 2.0 3.0 4.0
VGS/V
ID/A
Tj/C= 175 25
50
55
60
65
70
75
345678910
VGS/V
RDS(ON) Ohm
0
10
20
30
40
0 102030405060
ID/A
gfs/S
October 2000 4 Rev 1.200